Hitachi HAF2015RJ
N-Channel MOSFET
FEATURES
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● Logic level operation (5 to 6 V Gate drive) High endurance capability against to the short circuit Built–in the over temperature shut–down circuit Temperature hysteresis type. High density mounting. Outline SOP-8 D 7 D 8 2 G Gate resistor 8 Tmperature sencing circuit self return circuit Gate shutdown circuit 1 S D 5 5 7 6 3 1 2 4 MOS1 D 6 4 G Gate resistor Tmperature sencing circuit self return circuit Gate shutdown circuit 3 S 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain MOS2 HAF2015RJ
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. 2. 3. 4. Symbol VDSS VGSS VGSS ID I D(pulse) I DR I AP Note4 Note4 Note2 Note3 Note1 Ratings 60 16 –2.5 2 4 2 0.54 25 2 1.5 150 –55 to +150 Unit V V V A A A A mJ W W °C °C EAR Pch Pch Tch...