Hitachi HSK120
Silicon Epitaxial Planar Diode for High Speed Switching
| Part No. | HSK120 |
|---|---|
| Datasheet | HSK120 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Diode for High Speed Switching |
| Buy | Stock & Price |
FEATURES
● Low reverse recovery time. (trr =3.0ns max)● LLD package is suitable for high density surface mounting and high speed assembly Ordering Information Type No. HSK120 Cathode band White Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK120
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note Symbol VRM VR I FM I FSM IO Tj Tstg *1 Value 70 60 450 4 150 175 -65 to +175 Unit V V mA A mA °C °C 1. Within 1µs forward surge current..ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Reverse voltage Reverse current Capacitance Reverse recovery time Symbol VF VR IR C t rr Min — 70 — — — Typ — — — — — Max 0.8 — 0.1 3.0 3.0 Unit V V µA pF ns Test Condition I F = 10 mA I R = 5µA VR = 60V VR = 0V, f = 1 MHz I F = 10 mA, VR = 6V, RL = 50Ω, I rr = 0.1IR 2 HSK120 Main Characteristic -1 10 10 -...
