Hitachi HSK122
Silicon Epitaxial Planar Diode for High Voltage Switching
| Part No. | HSK122 |
|---|---|
| Datasheet | HSK122 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Diode for High Voltage Switching |
| Buy | Stock & Price |
FEATURES
● High reverse voltage. (VR = 400V)● LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSK122 Cathode band Orange Package Code LLD Outline Cathode band 1 2 Cathode band 1 2 1. Cathode 2. Anode HSK122
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Junction temperature Storage temperature Note: Within 1s forward surge current. Symbol VRM VR I FM I FSM * IO Tj Tstg Value 410 400 625 1 150 175 –65 to +175 Unit V V mA A mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Reverse current Capacitance Reverse recovery time Symbol VF IR C t rr Min — — — — Typ — — — — Max 1.2 1.0 10 10 Unit V µA pF ns Test Condition I F = 100mA VR = 400V VR = 0V, f = 1MHz I F = 30mA, VR = 10V, RL = 2kΩ 2 HSK122 1.0 Forward current I F (A) 10 –1 10 –2 10 –3 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) 25°C Ta = 75°C Ta = 2 5°C Ta = –2 5°C Ta = 1 1.2 Fig.1 Forward current Vs.
