Hitachi HSM276S
Silicon Schottky Barrier Diode
| Part No. | HSM276S |
|---|---|
| Datasheet | HSM276S Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● High forward current, Low capacitance.● HSM276S which is interconnected in series configuration is designed for balanced mixer use.
● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276S Laser Mark C2 Package Code MPAK Outline 3 2 1 (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HSM276S
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 –55 to +125 Unit V mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability *1 Symbol Min VR IR IF C ∆C — 3.0 — 35 — — 30 Typ — — — — — — Max — 50 — 0.90 0.10 — Unit V µA mA pF pF V Test Condition I R = 1 mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1 MHz VR = 0.5V, f = 1 MHz C=200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 100µA at VR =...
