Hitachi HSM276SR
Silicon Schottky Barrier Diode
| Part No. | HSM276SR |
|---|---|
| Datasheet | HSM276SR Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
● High forward current, Low capacitance.● HSM276SR which is interconnected in series configuration is designed for balanced mixer use.
● MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM276SR Laser Mark C9 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average forward current Junction temperature Storage temperature Note: Per one device Symbol VR I O* Tj Tstg Value 3 30 125 –55 to +125 Unit V mA °C °C HSM276SRELECTRICAL CHARACTERISTICS
(Ta = 25°C)*1 Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD Capability Symbol VR IR IF C ∆C — Min 3.0 — 35 — — 30 Typ — — — — — — Max — 50 — 0.90 0.10 — Unit V µA mA pF pF V Test Condition I R = 1mA VR = 0.5V VF = 0.5V VR = 0.5V, f = 1MHz VR = 0.5V, f = 1MHz * 2C = 200pF, Both forward and reverse direction 1 pulse Notes: 1. Per one device 2.
