Hitachi HSU83
Silicon Epitaxial Planar Diode for High Voltage Switching
| Part No. | HSU83 |
|---|---|
| Datasheet | HSU83 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Epitaxial Planar Diode for High Voltage Switching |
| Buy | Stock & Price |
FEATURES
● High reverse voltage. (VR = 250V)● Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU83 Laser Mark T Package Code URP Outline Cathode mark Mark 1 T 2 1. Cathode 2. Anode HSU83
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM I FSM IO Tj Tstg *1 Value 300 250 300 2 100 125 –55 to +125 Unit V V mA A mA °C °C 1. Value at duration of 10msec.ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min — — — — — Typ — — — — — Max 1.2 0.2 100 3.0 100 pF ns Unit V µA Test Condition I F = 100 mA VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR =30 mA, Irr = 3mA 2 HSU83 Main Characteristic -2 -5 10 10 (A) 10 -3 -6 10 10 -4 -5 Reverse curren...
