Hitachi HSU88
Silicon Schottky Barrier Diode for Various Detector/ Mixer
| Part No. | HSU88 |
|---|---|
| Datasheet | HSU88 Download |
| Manufacturer |  Hitachi |
| Description | Silicon Schottky Barrier Diode for Various Detector/ Mixer |
| Buy | Stock & Price |
FEATURES
● Low capacitance. (C=0.8pF max)● Low forward voltage.
● Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU88 Laser Mark 9 Package Code URP Outline Cathode mark Mark 1 9 2 1. Cathode 2. Anode HSU88
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 15 125 -55 to +125 Unit V mA °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Forward voltage Symbol VF1 VF2 Reverse current I R1 I R2 Capacitance ESD-Capability *1 Min 350 500 30 Typ Max 420 580 0.2 10 0.8 Unit mV µA Test Condition I F = 1 mA I F = 10 mA VR = 2V VR = 10V C pF V VR = 0V, f = 1 MHz C = 200pF , Both forward and reverse direction 1 pulse. Notes 1. Failure criterion ; IR ≥ 400nA at VR =2 V 2 HSU88 Main Characteristic 10 -2 10 -6 (A) 10 -3 Reverse current I R (A) 10 -7 Ta= 75°C Forward current IF 10 -4 10 -8 Ta=...
