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HVC133 Datasheet PDF

Hitachi HVC133

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

Part No. HVC133
Datasheet HVC133 Download
Manufacturer
Hitachi
Description Silicon Epitaxial Planar Pin Diode for High Frequency Switching
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HVC133 datasheet page 1 preview

FEATURES

● Low capacitance.(C1=1.0pF max)
● Low forward resistance. (rf=0.7 Ω max)
● Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC133 Laser Mark P3 Package Code UFP Outline Cathode mark Mark 1 P3 2 1. Cathode 2. Anode HVC133

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +125 Unit V mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30 — — — — — Typ — — — — — 0.55 Max — 100 0.85 1.0 0.9 0.7 Ω Unit V nA V pF Test Condition I R = 1µA VR = 25V I F = 2 mA VR = 1V, f = 1 MHz VR = 6V, f = 1 MHz I F = 2mA, f = 100 MHz 2 HVC133 Main Characteristic 10 -2 10 -10 10 Forward current I F (A) -4 (A) 10 -11 10 Reverse current I -6 R Ta= 75°C 10 -12 10 -8 Ta= 50°C Ta= 75°C Ta= 50°C 10 -10 10-13 Ta= 25°C Ta= 25°C 10 -12 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) 1.0 10 -14 0 5 10 15 20 25 30 Reverse voltage VR (V) Fig.2 Reverse current Vs.
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