Hitachi HVC136
Silicon Epitaxial Trench Pin Diode for Antenna Switching
FEATURES
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● Adopting the trench structure improves low capacitance.(C = 0.45 pF max) Low forward resistance. (rf = 2.5 Ω max) Low operation current. Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high frequency. Ordering Information Type No. HVC136 Laser Mark P6 Package Code UFP Outline Cathode mark Mark 1 P6 2 1. Cathode 2. Anode HVC136
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance ESD-Capability *1 Symbol IR VF C rf — Min — — — — 100 Typ — — — — — Max 0.1 0.9 0.45 2.5 — Unit µA V pF Ω V Test Condition VR = 60V I F = 2 mA VR = 1V, f = 1 MHz I F = 2mA, f = 100 MHz C = 200pF , Both forward and reverse direction 1 pulse. Note : 1. Fail...