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HZM56ZFA - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Key Features

  • HZM5.6ZFA has four devices, and can absorb external + and -surge.
  • Low capacitance (C=8.5pF max) and can protect ESD of signal line.
  • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM5.6ZFA Laser Mark 56Z Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM5.6ZFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Sto.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HZM5.1N Silicon Epitaxial Planar Zener Diode
HZM5.6N Silicon Epitaxial Planar Zener Diode
HZM5.6ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb
HZM10N Silicon Epitaxial Planar Zener Diode
HZM11N Silicon Epitaxial Planar Zener Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HZM5.6ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-796 (Z) Rev 0 May. 1999 Features • HZM5.6ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM5.6ZFA Laser Mark 56Z Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM5.6ZFA Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C 1. Four device total, See Fig.2.