HZM56ZFA
HZM56ZFA is Silicon Epitaxial Planar Zener Diode for Surge Absorb manufactured by Hitachi Semiconductor.
Features
- HZM5.6ZFA has four devices, and can absorb external + and -surge.
- Low capacitance (C=8.5p F max) and can protect ESD of signal line.
- MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM5.6ZFA Laser Mark 56Z Package Code MPAK-5
Outline
1 2
1 Cathode 2 Cathode 3 Cathode
5 4 3
4 Anode 5 Cathode
(Top View)
HZM5.6ZFA
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note Symbol Pd Tj Tstg
- 1
Value 200 150 -55 to +150
Unit m W °C °C
1. Four device total, See Fig.2.
Electrical Characteristics (Ta = 25°C)
- 1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
- 2
Symbol VZ IR C rd
- Min 5.31
- -
- 8
Typ
- - 8.0
- -
Max 5.92 0.5 8.5 80
- Unit V µA p F Ω k V
Test Condition I Z = 5 m A, 40ms pulse VR = 2.5V VR = 0V, f = 1 MHz I Z = 5 m A C =150p F, R = 330 Ω, Both forward and reverse direction 10 pulse
Notes 1. Per one device. 2. Failure criterion ; IR > 0.5µA at VR = 2.5V.
HZM5.6ZFA
Main Characteristic
-2...
