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HZS18 Datasheet PDF

Hitachi HZS18

Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply

Part No. HZS18
Datasheet HZS18 Download
Manufacturer
Hitachi
Description Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
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HZS18 datasheet page 1 preview

FEATURES

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● Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.5V through 38V of zener voltage provide flexible application. Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HZS Series Mark Type No. Package Code MHD Outline B 7 2 1 2 Type No. Cathode band 1. Cathode 2. Anode HZS Series

ABSOLUTE MAXIMUM RATINGS

(Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 -55 to +175 Unit mW °C °C

ELECTRICAL CHARACTERISTICS

(Ta = 25°C) Zener Voltage VZ (V)*1 Type HZS1 HZS2 Grade C3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS3 A1 A2 A3 B1 B2 B3 C1 C2 C3 HZS4 A1 A2 A3 Note: Min 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 Max 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 5 5 1.0 100 5 5 5 0.5 100 5 5 5 0.5 100 5 Reverese Current Test Condition IR (µA) IZ (mA) 5 5 Max 25 25 Dynamic Resistance Test Condition IZ (mA) 5 5 Test Condition rd (Ω) VR (V) 0.5 0.5 Max 100 100 1.
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