Renesas Electronics HZS18
Silicon Epitaxial Planar Zener Diode
| Part No. | HZS18 |
|---|---|
| Datasheet | HZS18 Download |
| Manufacturer |  Renesas Electronics |
| Description | Silicon Epitaxial Planar Zener Diode |
| Buy | Stock & Price |
FEATURES
● Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc.● Wide spectrum from 1.6V through 38V of zener voltage provide flexible application.
● Suitable for 5mm-pitch high speed automatic insertion. Ordering Information Type No. HZS Series Pin Arrangement Mark Type No. Package Code MHD B 7 12 2 Type No. Cathode band 1. Cathode 2. Anode Rev.3.00, Mar.11.2004, page 1 of 6 HZS Series
ABSOLUTE MAXIMUM RATINGS
Item Power dissipation Junction temperature Storage temperature Symbol Pd Tj Tstg Value 400 200 −55 to +175 (Ta = 25°C) Unit mW °C °CELECTRICAL CHARACTERISTICS
Zener Voltage Type Grade VZ (V)*1 Min HZS2 A1 1.6 A2 1.7 A3 1.8 B1 1.9 B2 2.0 B3 2.1 C1 2.2 C2 2.3 C3 2.4 HZS3 A1 2.5 A2 2.6 A3 2.7 B1 2.8 B2 2.9 B3 3.0 C1 3.1 C2 3.2 C3 3.3 HZS4 A1 3.4 A2 3.5 A3 3.6 B1 3.7 B2 3.8 B3 3.9 C1 4.0 C2 4.1 C3 4.2 HZS5 A1 4.3 A2 4.4 A3 4.5 B1 4.6 B2 4.7 B3 4.8 Note: 1. Tested with DC. Max 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5...
