Datasheet4U.com

PF01411A Datasheet PDF

Hitachi PF01411A

MOS FET Power Amplifier

Part No. PF01411A
Datasheet PF01411A Download
Manufacturer
Hitachi
Description MOS FET Power Amplifier
Buy Stock & Price
PF01411A datasheet page 1 preview

FEATURES

●
●
●
● High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 3.8 W Wide gain control range : 90 dB Typ Pin Arrangement
● RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G

ABSOLUTE MAXIMUM RATINGS

(Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 10 –30 to +100 –30 to +100 5 Unit V A V mW °C °C W PF01411A

ELECTRICAL CHARACTERISTICS

(Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 880 0.5 — 40 — — — 3.8 Typ — — — 45 –45 –45 1.5 4.3 Max 915 3.0 100 — –35 –35 3 — Unit MHz V µA % dBc dBc — W Pin = 1 mW, VDD = 4.8 V, VAPC = 3.0 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 mW, VDD = 4.3 V, VAPC = 3.0 V,...
PF01411A page 2 preview PF01411A page 3 preview