Hitachi PF01411B
MOS FET Power Amplifier
FEATURES
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● High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10 –30 to +100 –30 to +100 5 Unit V A V mW °C °C W PF01411BELECTRICAL CHARACTERISTICS
(Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.D. 3rd H.D. VSWR (in) Pout (1) Min 880 0.5 — 40 — — — 35.5 Typ — — — 45 –45 –45 1.5 36.0 Max 915 2.2 100 — –35 –35 3 — Unit MHz V µA % dBc dBc — dBm Pin = 0dBm, VDD = 3.5V, VAPC = 2.2V, RL = Rg = 50Ω, Tc = 25°C Pin = 0dBm, VDD = 3.0V, VAPC = 2.2V, RL =...