Hitachi PF08103A
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone
| Part No. | PF08103A |
|---|---|
| Datasheet | PF08103A Download |
| Manufacturer |  Hitachi |
| Description | MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone |
| Buy | Stock & Price |
FEATURES
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● 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +4.5 dBm input Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 48% Typ at 34.5 dBm for E-GSM 36% Typ at 31.5 dBm for DCS1800 PF08103A Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Control (H: 2 V Min, L: 0.3 V Max) Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V Current of Control Pin Control Pin VCTL Equivalent Input Circuit Control Current 160 µA Max at 3 V VCTL 80 µA Max at 3 V Vapc 3 mA Max at 3 V 2 PF08103A Internal Diagram and External Circuit 4 Pout GSM 8 Pin 5 Pout DCS Z1 Bias circuit 6 Vdd1 VCTL C3 C1 FB Pin Vdd1 VCTL FB VCTL 1 VCTL C5 2 Vapc C6 7 Vdd2 C7 C2 FB Vapc Vdd2 Pout DCS Pout GSM C4 3 Z2 Z3 Note: C1 = C2 = 4.7 µF TANTALUM ELECTROLYTE C3 = C4 = 0.01 µF CERAMI...
