Hitachi PF08103B
MOS FET Power Amplifier
| Part No. | PF08103B |
|---|---|
| Datasheet | PF08103B Download |
| Manufacturer |  Hitachi |
| Description | MOS FET Power Amplifier |
| Buy | Stock & Price |
FEATURES
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● 1 in / 2 out dual band amplifier Simple external circuit including output matching circuit Simple band switching and power control High gain 3stage amplifier : +1 dBm input for GSM, +4.5 dBm input for DCS Lead less thin & Small package : 11 × 13.75 × 1.8 mm High efficiency : 45% Typ at 35.0 dBm for E-GSM 35% Typ at 32.5 dBm for DCS1800 PF08103B Internal Circuit Block Diagram Vdd1 Vdd2 Pout GSM Pin Pout DCS Bias circuit VCTL VCTL Vapc Band Select and Power Control Operating Mode GSM Tx ON DCS Tx ON Tx OFF VCTL H L L VCTL L H L Vapc Control Control < 0.2 V Current of Control Pin Control Pin VCTL Equivalent Input Circuit Control Current 2 µA Max VCTL 1 µA Max Vapc 3 mA Max at 2.2 V Note: Control current is preliminary value. 2 PF08103B
ABSOLUTE MAXIMUM RATINGS
(Tc = 25°C) Item Supply voltage Supply current Symbol VDD I DD GSM I DD DCS VCTL , VCTL voltage Vapc voltage Input power Operating case temperature Storage temperature Output power VCTL, VCTL Vapc Pin Tc (op) Ts...
