U17 - Controlled Avalanche Diode

Hitachi Semiconductor (now Renesas)

Key Features

Transient surge voltage protection.
Diffused-junction. Glass passivated and encapsulated.

U17 controlled avalanche diode by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	U17
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	91.84 KB
Description	Controlled Avalanche Diode
Datasheet	U17 Datasheet

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www.DataSheet4U.com CONTROLLED AVALANCHE DIODE U17 FEATURES • Transient surge voltage protection. • Diffused-junction. Glass passivated and encapsulated. OUTLINE DRAWING φ 5 MAX (0.2) Unit in mm(inch) Direction of polarity Cathode band 28MIN. (1.10) 62MIN. (2.44) Type U17B(100V) U17C(200V) U17D(300V) U17E(400V) Color of cathode band φ 1.2 (0.05) 7MAX (0.28) Weight: 1.0 (g) ABSOLUTE MAXIMUM RATINGS Items Repetitive Peak Reverse Voltage Peak Reverse Power Average Forward Current Surge(Non-Repetitive) Forward Current I t Limit Value Operating Junction Temperature Storage Temperature 2 Type VRRM PRM IF(AV) IFSM It Tj Tstg 2 U17B V kW A A As °C °C 2 U17C 200 U17D 300 28MIN. (1.