1SS110
1SS110 is Silicon Diode manufactured by Hitachi Semiconductor.
Features
- Low forward resistance. (r f = 0.9 Ω max)
- Suitable for 5mm pitch high speed automatical insertion.
- Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS110 Cathode band Verdure Package Code MHD
Outline
1 Cathode band
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Junction temperature Storage temperature Symbol VR IF Tj Tstg Value 35 100 175
- 65 to +175 Unit V m A °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse voltage Reverse current Capacitance Forward resistance Symbol VF VR IR C rf Min
- 35
- -
- Typ
- -
- -
- Max 1.0
- 0.1 1.2 0.9 Unit V V µA p F Ω Test Condition I F = 10m A I R = 10µA VR = 25V VR = 6V, f = 1MHz I F = 2m A, f = 100MHz
- 2
10 Forward current I F (A)
- 4
10- 6
- 8
- 10
- 12
Forward voltage VF (V)
Fig.1 Forward current Vs. Forward...
