1SS198
1SS198 is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Detection efficiency is very good.
- Small temperature coefficient.
- Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS198 Cathode Green Mark 2 Package Code MHD
Outline
1 Cathode band
1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125
- 55 to +125 Unit V m A °C °C
Electrical Characteristics (Ta = 25°C)
Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Notes: 1.
- 1
Symbol IF IR C η
- Min 4.5
- - 70 100
Typ
- -
- -
- Max
- 70 1.5
- -
Unit m A µA p F % V
Test Condition VF = 1V VR = 6V VR = 1V, f = 1MHz Vin = 2Vrms, f = 40MHz, RL = 5kΩ, CL = 20p F C = 200p F, Both forward and reverse direction 1 pulse.
Failure Criterion ; IR ≥ 140µA at V R = 6V
Main Characteristic
-1 -2
Forward current I F (A)
-3
Reverse current I R...
