2SA1189 Datasheet | Hitachi Semiconductor

2SA1188, 2SA1189 Silicon PNP Epitaxial Application - Low frequency amplifier - plementary pair with 2SC2853 and 2SC2854 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1188 - 90 - 90 - 5 - 100 100 400 150 - 55 to +150 2SA1189 - 120 - 120 - 5 - 100 100 400 150 - 55 to +150 Unit V V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) 2SA1188 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO h FE- 2SA1189 Max - - - - 0.1 - 0.1 800 Min Typ Max - - - - 0.1 - 0.1 800 Unit V V V µA µA Test conditions I C = - 10 µA, IE = 0 I C = - 1 m A, RBE = ∞ I E = - 10 µA, IC = 0 VCB = - 70 V, IE = 0 VEB = - 2 V, IC = 0 VCE = - 12 V, I C = - 2 m A- 2 I C = - 10 m A, I B = - 1 m A-...