2SA836
2SA836 is Silicon PNP Epitaxial Transistor manufactured by Hitachi Semiconductor.
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings
- 55
- 55
- 5
- 100 100 200 150
- 55 to +150 Unit V V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min
- 55
- 55
- 5
- -
Typ
- -
- -
- -
- 0.1
- 0.66 200 2.0 1 0.5
Max
- -
- - 100
- 50 500
- 0.5
- 0.75
- - 5 1
Unit V V V n A n A
Test conditions I C =
- 10 µA, IE = 0 I C =
- 1 m A, RBE = ∞ I E =
- 10 µA, IC = 0 VCB =
- 18 V, IE = 0 VEB =
- 2 V, IC = 0 VCE...
