2SB1048
2SB1048 is PNP Transistor manufactured by Hitachi Semiconductor.
Silicon PNP Epitaxial, Darlington
Application
High gain amplifier
Outline
UPAK
1 3 2
2,4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak)- PC
- Tj Tstg
2 1
Ratings
- 60
- 60
- 7
- 1
- 2 1 150
- 55 to +150
Unit V V V A A W °C °C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 × 30 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Notes: 1. Pulse test 2. Marking is “BT” Symbol V(BR)CBO V(BR)CEO I CBO I EBO h FE VCE(sat) VBE(sat) Min
- 60
- 60
- - 2000
- - Typ
- -
- -
- -
- Max
- -
- 10
- 10 100000
- 2.0
- 2.0 V V Unit V V µA µA Test conditions I C =
- 10 µA, IE = 0 I C =
- 1 m A, RBE = ∞ VCB =
- 60 V, IE = 0 VEB...
