2SB649
2SB649 is Silicon PNP Transistor manufactured by Hitachi Semiconductor.
2SB649, 2SB649A
Silicon PNP Epitaxial
Application
Low frequency power amplifier plementary pair with 2SD669/A
Outline
TO-126 MOD
1. Emitter 2. Collector 3. Base
2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC
- Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg
- 180
- 120
- 5
- 1.5
- 3 1 20 150
- 55 to +150
2SB649A
- 180
- 160
- 5
- 1.5
- 3 1 20 150
- 55 to +150
Unit V V V A A W W °C °C
2SB649, 2SB649A
Electrical Characteristics (Ta = 25°C)
2SB649 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO
2SB649A Max
- -
- - 10 320
- - 1
- 1.5
- - Min Typ Max
- -...
