2SB858 Datasheet | Hitachi Semiconductor

2SB857, 2SB858 Silicon PNP Triple Diffused Application Low frequency power amplifier plementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at T C = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC - Tj Tstg 2SB857 - 70 - 50 - 5 - 4 - 8 40 150 - 45 to +150 - 70 - 60 - 5 - 4 - 8 40 150 - 45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) 2SB857 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2SB858 Max - - - - 1 320 - - 1 - 1 - Min - 70 - 60 -...