2SC1212A Datasheet | Hitachi Semiconductor

2SC1212, 2SC1212A Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C Tj Tstg 2SC1212 50 50 4 1 0.75 8 150 - 55 to +150 2SC1212A 80 80 4 1 0.75 8 150 - 55 to +150 Unit V V V A W W °C °C 2SC1212, 2SC1212A Electrical Characteristics (Ta = 25°C) 2SC1212 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2SC1212A Max - - - 5 200 - 1.0 1.5 - Min 80 80 4 - 60 20 - - - Typ - - - - - - 0.65 0.75 160 Max - - - 5 200 - 1.0 1.5 - V V MHz Unit V V V µA Test conditions I C = 1 m A, IE = 0 I C = 10 m A, RBE = ∞ I E = 1 m A, IC = 0 VCB = 50 V, IE = 0 VCE = 4 V, IC = 50 m A VCE = 4 V, IC = 1 A (pulse test) VCE = 4 V, IC = 50 m A I C = 1 A, IB = 0.1 A (pulse test) VCE = 4 V, IC = 30 m A Min 50 50 4 - 60...