2SC1213 Datasheet | Hitachi Semiconductor

2SC1213, 2SC1213A Silicon NPN Epitaxial Application - Low frequency amplifier - plementary pair with 2SA673 and 2SA673A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1213, 2SC1213A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC1213 35 35 4 500 400 150 - 55 to +150 2SC1213A 50 50 4 500 400 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) 2SC1213 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO 2SC1213A Max - - - 0.5 320 - 0.6 - Min 50 50 4 - 60 10 - - Typ - - - - - - 0.2 0.64 Max - - - 0.5 320 - 0.6 - V V Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC =10 m A VCE = 3 V, I C = 500 m A- 2 I C = 150 m A, I B = 15 m A- 2 VCE = 3 V, IC = 10 m A Typ - - - - - - 0.2 0.64 35 35 4 - 60 10 - - DC current tarnsfer ratio h FE- h FE Collector to emitter saturation voltage VCE(sat) Base to emitter voltage...