2SC1472K Datasheet | Hitachi Semiconductor

2SC1472(K) Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline TO-92 (1) 3 2 1. Emitter 2. Collector 3. Base 3 2 1 2SC1472 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 - 55 to +150 Unit V V V m A m A m W °C °C 2SC1472 (K) Electrical Characteristics (Ta = 25°C) Item Symbol Min 30 - - 1 1 Typ - - - - - - - - - - 60 Max - 100 100 100000 - - 1.5 2.0 - 10 - Unit V n A n A Test conditions I C = 1 m A, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 I C = 10 m A, VCE = 5 V I C = 100 m A, VCE = 5 V (Pulse Test) I C = 400 m A, VCE = 5 V (Pulse Test) Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current Emitter cutoff current DC current transfer ratio I CBO I EBO h FE1- h FE2- 2000 3000 3000 - - 50 - - h FE3- 1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) f T Cob t on V V MHz p F ns I C = 100 m A, IB = 0.1 m A I C = 100 m A, IB = 0.1 m A VCE = 5 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V I C = 100 IB1 = 100 m A I B2 = - IB1 Turn off time Storage time Note: h FE1 h FE2 h FE3 A t off t stg B - -...