2SC1921 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application - High frequency high voltage amplifier - Video output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 250 200 5 50 600 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 250 200 5 - 30 - 60 - Typ - - - - - - 130 3 Max - - - 1.0 300 1.0 - 4 V MHz p F Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCE = 120 V, RBE = ∞ VCE = 6 V, IC = 10 m A I C = 10 m A, IB = 1 m A VCE = 6 V, IC = 10 m A VCB = 6 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO h FE VCE(sat) f T Cob Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 600 Collector Current IC (m A) Typical Output Characteristics 20 16 200 180 160 140 12 120 100 8 80 60 4 40 20 µA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 50 DC Current Transfer Ratio h FE Collector Current IC (m A) 120 DC Current Transfer Ratio vs. Collector Current 20 10 5 Ta = 75°C - 25 Ta = 75°C - 25 2 1 0.4 VCE = 6...