2SC2309 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 200 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 55 50 5 - - Typ - - - - - - - - 230 1.8 Max - - - 0.5 0.5 1200 0.75 0.2 - 3.5 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: D 250 to 500 E 400 to 800 F 600 to 1200 V(BR)EBO I CBO I EBO h FE- VBE VCE(sat) f T Cob - - - - V V MHz p F VCE = 12 V, IC = 2 m A I C = 10 m A, IB = 1 m A VCE = 12 V, IC = 2 m A VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SC2309 is grouped by h FE as follows. See characteristic curves of 2SC1345. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 250 200 150 100 50 50 100 Ambient Temperature Ta (°C) Unit: mm 4.8 ± 0.3 3.8 ±...