2SC2324 Datasheet | Hitachi Semiconductor

2SC2324(K) Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg Ratings 60 60 7 1 2 0.8 8 150 - 55 to +150 Unit V V V A A W W °C °C 2SC2324(K) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 7 - 2000 - - - - Typ - - - - - - 100 600 Max - - 10 - 1.5 2.0 - - V V ns ns VCC = 12 V I C = 250 m A, IB1 = - IB2 = 5 m A Unit V V µA Test conditions I C = 1 m A, RBE = ∞ I E = 0.1 m A, IC = 0 VCB = 60 V, IE = 0 VCE = 10 V, IC = 500 m A- 1 I C = 500 m A, IB = 0.5 m A- 1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Turn off time Note: 1. Pulse test. V(BR)EBO I CBO h FE VCE(sat) VBE(sat) t on t off Maximum Collector Dissipation Curve 10 Collector power dissipation Pc (W) 3 i C (peak) Area of Safe Operation 1µ s Collector Current IC (A) IC...