2SC2463 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 55 50 5 100 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 55 50 5 - - Typ - - - - - - - - Max - - - 0.5 0.5 1200 0.5 0.75 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 30 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Note: Grade Mark h FE D DD 250 to 500 E DE 400 to 800 V(BR)EBO I CBO I EBO h FE- - - F DF VCE(sat) VBE I C = 10 m A, IB = 1 m A VCE = 12 V, IC = 2 m A 1. The 2SC2463 is grouped by h FE as follows. 600 to 1200 See characteristic curves of 2SC1345. Maximum Collector Dissipation Curve 150 Collector Power Dissipation PC (m W) 50 100 Ambient Temperature Ta...