2SC2610 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application - High voltage amplifier - TV Video output Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 800 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 300 300 5 - 30 - 50 - Typ - - - - - - 80 - Max - - - 1.0 200 1.5 - 4.0 V MHz p F Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ VCE = 20 V, IC = 20 m A I C = 20 m A, IB = 2 m A VCE = 20 V, IC = 20 m A VCB = 20 V, IE = 0, f = 1 MHz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance V(BR)EBO I CEO h FE VCE(sat) f T Cob Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 800 Collector Current IC (m A) 1.0 Typical Output Characteristics 16 14 12 10 8 0.4 6 4 0.2 2 µA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 200 0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 100 Collector Current IC (m A) 50 20 10 5 DC Current Transfer Ratio h FE VCE = 20 V 100 DC Current Transfer Ratio vs. Collector Current VCE = 20 V Pulse Ta = 25 - 25 C 75° 2 1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE...