2SC2853 Datasheet | Hitachi Semiconductor

2SC2853, 2SC2854 Silicon NPN Epitaxial Application - Low frequency amplifier - plementary pair with 2SA1188 and 2SA1189 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2853, 2SC2854 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2853 90 90 5 100 - 100 400 150 - 55 to +150 2SC2854 120 120 5 100 - 100 400 150 - 55 to +150 Unit V V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) 2SC2853 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO h FE- 2SC2854 Max Min - - - 0.1 0.1 800 120 120 5 - - 250 Typ - - - - - - Max Unit Test conditions - - - 0.1 0.1 800 V V V µA µA I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 m A- 2 I C = 10 m A, IB = 1 m A- 2 Typ - - - - - - 90 90 5 - - 250 - - - - VCE(sat) VBE(sat) f T 0.05 0.10 - 0.7 310 3 1.0 - - - -...