2SC2899 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application High speed and high voltage switching Outline TO-126 MOD 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC - Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg Ratings 500 400 10 0.5 1.0 0.75 10 150 - 55 to +150 Unit V V V A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 400 400 Typ - - Max - - Unit V V Test conditions I C = 0.1 A, RBE = ∞, L = 100 m H I C = 0.5 A, IB1 = - IB2 = 0.1 A, VBE = - 5 V, L = 180 µH, Clamped I E = 10 m A, IC = 0 VCB = 400 V, IC = 0 VCE = 350 V, RBE = ∞ VCE = 5 V, IC = 0.25 A- 1 VCE = 5 V, IC = 0.5 A- 1 V V µs µs µs I C = 0.5 A, IB1 = - IB2 = 0.1 A, VCC ≅ 150 V I C = 0.25 A, IB = 0.05 A- 1 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO - - 15 7 - - - - - - - - - - - - - - - - 20 50 - - 1.0 1.5 1.0 2.0 1.0 V µA µA DC current transfer ratio h FE1 h FE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test VCE(sat) VBE(sat) t on t stg...