2SC2979 Datasheet | Hitachi Semiconductor

Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC - Tj Tstg Ratings 900 800 7 3 6 1.5 40 150 - 55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol VCEO(sus) VCEX(sus) Min 800 800 Typ - - Max - - Unit V V Test conditions I C = 0.2 A, RBE = ∞, L = 100 m H I C = 3 A, IB1 = 0.9 A, IB2 = - 0.6 A, VBE = - 5.0 V, L = 180 µH, Clamped I E = 10 m A, IC = 0 VCB = 750 V, IE = 0 VCE = 650 V, RBE = ∞ VCE = 5 V, IC = 0.3 A- 1 VCE = 5 V, IC = 1.5 A- 1 V V µs µs µs I C = 1.5 A, IB1 = 0.3 A, I B2 = - 0.75 A, VCC ≅ 250 V I C = 0.75 A, IB = 0.15 A- 1 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO - - 15 7 - - - - - - - - - - - - - - - - 100 100 - - 1.0 1.5 1.0 3.0 1.0 V µA µA DC current transfer ratio h FE1 h FE2 Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test VCE(sat) VBE(sat) t on t stg tf Maximum Collector Dissipation Curve 60 Collector power dissipation PC (W) 10 3 Collector current IC (A) 1.0 0.3 0.1 0.03 40 i...