2SC3338 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 12 3 50 400 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “AR”. Symbol V(BR)CBO V(BR)CEO I EBO I CBO h FE Cob f T PG NF Min 20 12 - - 30 - 3.5 - - Typ - - - - 90 1.0 4.5 8.2 2.0 Max - - 10 0.5 200 1.5 - - - p F GHz d B d B Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ VEB = 3 V, IC = 0 VCB = 15 V, IC = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz See characteristic curves of 2SC3127. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 600 50 100 Ambient Temperature Ta (°C) Unit: mm 4.5 ± 0.1 1.8 Max φ1 1.5 ± 0.1 0.44 Max (2.5) (1.5) 1.5 1.5 3.0 0.8 Min 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference...