2SC3380
2SC3380 is Silicon NPN Triple Diffused Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Triple Diffused
Application
- High frequency high voltage amplifier
- High voltage switch
Outline
UPAK
1 3 2
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC
- Tj Tstg
Ratings 300 300 5 100 1 150
- 55 to +150
Unit V V V m A W °C °C
1. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth product Collector output capacitance Note: Marking is “AS”. Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CEO VCE(sat) h FE f T Cob Min 300 300 5
- - 30
- - Typ
- -
- -
- - 80
- Max
- -
- 1 1.5 200
- 4 MHz p F Unit V V V µA V Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCE = 250 V, RBE = ∞ I C = 20 m A, IB = 2 m A VCE = 20 V, IC = 20 m A VCE = 20 V, IC = 20 m A VCB = 20 V, IE = 0, f = 1 MHz
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (m A) Typical Output Characteristics 1.0 14 12 10 0.6 9 8 4 0.2 2 µA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics 50 DC Current Transfer Ratio h FE Collector Current IC (m A) VCE = 20 V Ta = 25°C 100
DC Current Transfer Ratio vs. Collector Current VCE = 20 V
10 V...
