2SC3510 Datasheet | Hitachi Semiconductor

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC3127 - 1 20 12 3 50 150 150 - 55 to +150 2SC3128 20 12 3 50 350 150 - 55 to +150 2SC3510 20 12 3 50 600 150 - 55 to +150 Unit V V V m A m W °C °C 1. Marking for 2SC3127 is “ID- ”. 2SC3127, 2SC3128, 2SC3510 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO V(BR)CEO I EBO I CBO h FE Cob f T PG NF Min 20 12 - - 30 - 3.5 - - Typ - - - - 90 0.9 4.5 10.5 2.2 Max - - 10 0.5 200 1.5 - - - p F GHz d B d B Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz Maximum Collector Dissipation Curve Collector Power Dissipation Pc (m W) 600 2SC3510 400 2SC3128 DC Current Transfer Ratio h FE 200 DC Current Transfer Ratio vs. Collector Current VCE = 5 V 200 2SC3127 0 0 50 100 150 Ambient Temperature Ta (°C) 200 1 2 5 10 20 50 Collector Current IC (m A) 100 2SC3127, 2SC3128,...