2SC3512 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | 2SC3512 |
|---|---|
| Datasheet | 2SC3512_HitachiSemiconductor.pdf |
| File Size | 28.28 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon NPN Transistor |
|
|
2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Collector Current 200 Gain Bandwidth Product fT (GHz) DC Current Transfer Ratio hFE Pulse VCE = 5 V 10 Gain Bandwidth Product vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 2.0 IE = 0 f = 1 MHz 1.6 Power Gain PG (dB) 20 VCE = 5 V f = 900 MHz 16 Power Gain vs.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3512 | Silicon NPN Transistor | Renesas |
 |
2SC3512 | Silicon NPN RF Transistor | Inchange Semiconductor |
View all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 2SC3510 | Silicon NPN Transistor |
| 2SC3513 | Silicon NPN Transistor |
| 2SC3553 | Silicon NPN Transistor |
| 2SC3127 | Silicon NPN Transistor |
| 2SC3128 | Silicon NPN Transistor |
| 2SC3336 | Silicon NPN Transistor |
| 2SC3337 | Silicon NPN Transistor |
| 2SC3338 | Silicon NPN Epitaxial Transistor |
| 2SC3365 | Silicon NPN Transistor |
| 2SC3374 | NPN Transistor |
