NF = 1.6 dB TYP.
@f = 900 MHz PG = 10.5 dB TYP.
100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band| Part number | 2SC3512 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.18 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet |
 2SC3512 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| 2SC3512 | Silicon NPN Transistor | Hitachi Semiconductor |
| 2SC3512 | Silicon NPN Transistor | Renesas |
| 2SC3510 | Silicon NPN Transistor | Hitachi Semiconductor |
| 2SC3513 | Silicon NPN Transistor | Hitachi Semiconductor |
| 2SC3513 | Silicon NPN Epitaxial Transistor | Kexin |
| Part Number | Description |
|---|---|
| 2SC3514 | Silicon NPN Power Transistor |
| 2SC3518-Z | Silicon NPN Power Transistor |
| 2SC3502 | Silicon NPN Power Transistor |
| 2SC3544 | Silicon NPN RF Transistor |
| 2SC3545 | Silicon NPN RF Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
