Datasheet Details
| Part number | 2SC3512 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.18 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet |
 2SC3512 Datasheet
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| Part number | 2SC3512 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 176.18 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet |
2SC3512 Datasheet
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Low Noise and High Gain NF = 1.6 dB TYP.@f = 900 MHz PG = 10.5 dB TYP.@f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 11 V VEBO Emitter-Base Voltage 2 V IC Collector Current-
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