Datasheet Details
| Part number | 2SC3514 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.61 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3514_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC3514.
| Part number | 2SC3514 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 198.61 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC3514_InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation@ Ta=25℃ 1.5 PC W Collector Power Dissipation@TC=25℃ 10 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA;
IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 50mA;
IB= 5mA ICBO Collector Cutoff Current VCB= 180V;
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