2SC3512 Datasheet

The 2SC3512 is a Silicon NPN Transistor.

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Part Number2SC3512
ManufacturerHitachi Semiconductor
Overview 2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base . , f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC3512 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 1,000 Collector Current IC (mA) 20 Typical Output Characteristics 180 160 140 120 800 16 600 400 12 100 80.
Part Number2SC3512
DescriptionSilicon NPN RF Transistor
ManufacturerInchange Semiconductor
Overview ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA. llector Cutoff Current VCB= 12V; IE= 0 ICEO Collector Cutoff Current VCE= 10V; RBE= ∞ IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 5V fT Current-Gain
*Bandwidth Product IC= 20mA ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 5V;f= 1.0MHz PG Power Gain.
Part Number2SC3512
DescriptionSilicon NPN Transistor
ManufacturerRenesas
Overview 2SC3512 Silicon NPN Epitaxial REJ03G0714-0300 Rev.3.00 Apr 20, 2006 Application UHF / VHF wide band amplifier Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) 1. Base 2. Emitter .
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* Unit V µA µA µA pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCE = 10 V, RBE = ∞ VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Rev.3.00 Apr 20, 2006 page 2 of.