2SC3512
2SC3512 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
UHF / VHF wide band amplifier
Outline
TO-92 (2)
1. Base 2. Emitter 3. Collector 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 600 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector to cutoff current Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO I CEO I EBO I CBO h FE Cob f T PG NF Min 15
- -
- 50
- -
- - Typ
- -
- - 120 1.2 6.0 10.5 1.6 Max
- 1 1 1 250 1.6
- -
- p F GHz d B d B Unit V µA µA µA Test conditions I C = 10 µA, IE = 0 VCE = 10 V, RBE = ∞ VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz
Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 1,000 Collector Current IC (m A) 20 Typical Output Characteristics
160 140 120
600 400
100 80
60 40
IB = 20 µA
50 100 150 Ambient Temperature Ta (°C)
2 4 6 8 10 Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current 200 Gain Bandwidth Product f T (GHz) DC Current Transfer Ratio h FE Pulse VCE = 5 V 10
Gain Bandwidth Product vs. Collector Current VCE = 5...
