2SC3553 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 35 35 4 500 300 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO h FE1- h FE2 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE Min 35 35 4 - 60 10 - - Typ - - - - - - 0.2 0.64 Max - - - 0.5 320 - 0.6 - Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 3 V, IC = 10 m A VCE = 3 V, IC = 500 m A- 2 I C = 150 m A, IB = 15 m A- 2 VCE = 3 V, IC = 10 m A Notes: 1. The 2SC3553 is grouped by h FE1 as follows. 2. Pulse test B 60 to 120 C 100 to 200 D 160 to 320 See characteristic curves of 2SC1213. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 300 50 100 150 Ambient Temperature Ta (°C) 4.2 Max 1.8 Max 3.2 Max 2.2 Max Unit: mm 0.45 ±...