2SC3957 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline MPAK-4 3 1 4 1. Collector 2. Emitter 3. Base 4. NC Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 40 30 10 300 500 150 150 - 55 to +150 Unit V V V m A m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CEO I CBO I EBO h FE1- Min 30 - - 2000 3000 3000 - - Typ - - - - - - - - Max - 100 100 100000 - - 1.5 2.0 Unit V n A n A Test conditions I C = 1 m A, RBE = ∞ VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 I C = 10 m A, VCE = 5 V- 2 I C = 100 m A, VCE = 5 V- 2 I C = 400 m A, VCE = 5 V- 2 I C = 100 m A, IB = 0.1 m A- 2 I C = 100 m A, IB = 0.1 m A- 2 h FE2- 1 h FE3- 1 Collector to emitter saturation voltage Base to emitter saturation voltage VCE(sat) VBE(sat) Notes: 1. The 2SC3957 is grouped by h FE as follows. 2. Pulse test Mark h FE1 h FE2 h FE3 GIA GIB 2000 to 100000 5000 to 100000 3000 min 3000 min 10000 min 10000 min Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 Collector Current IC (m...