2SC4196 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 15 3 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage Note: Marking is “QI- ”. I EBO VCE(sat) h FE Cob f T VOSC Min 25 - - - - 50 - 1.8 - Typ - - - - - - 0.7 2.4 200 Max - 0.3 10 1.0 0.3 180 1.0 - - p F GHz m V Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 m A, IB = 4 m A VCE = 5 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 m A VCC = 5 V, IC = 5 m A, f = 930 MHz Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 200 VCE = 5 V Pulse 0 0 100 150 50 Ambient Temperature Ta (°C) 1 10 20 2 5 Collector Current IC (m A) 50 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (p F) 4 Gain Bandwidth Product f T (GHz) VCE = 5 V Pulse 3 1.1 1.0 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 0 1 10 20 2 5 Collector Current IC (m A) 50 0.6 1 2 5 10 20 50 Collector to Base Voltage VCB (V) Oscillating Output Voltage vs. Supply Voltage Oscillating Output Voltage Vosc (m V) Oscillating Output Voltage Vosc (m V) 1,000 500 f = 930 MHz IC = 8 m A 5 3 1,000 500 f = 930 MHz VCC = 8 V 5 3 Oscillating Output Voltage vs....