2SC4260 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF frequency converter, Wide band amplifier Outline CMPAK 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 100 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain Noise figure Note: Marking is “TI- ”. I EBO VCE(sat) h FE Cob f T CG NF Min 25 - - - - 50 - 3.0 - - Typ - - - - - - 0.85 3.8 19 8 Max - 0.1 10 0.3 0.3 180 1.3 - - - p F GHz d B d B Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 13 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 m A, IB = 4 m A VCE = 5 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 5 m A VCC = 5 V, IC = 0.8 m A, f = 900 MHz f OSC = 930 MHz (- 5d Bm), f out = 30 MHz See characteristic curves of 2SC4197. Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 120 100 80 60 40 20 50 100 150 Ambient Temperature Ta (°C) Unit: mm 2.0 ± 0.2 0.1 0.3 + - 0.05 0.1 0.16 + - 0.06 1.25 ± 0.1 2.1 ± 0.3 -...