2SC4261
2SC4261 is Silicon NPN Transistor manufactured by Hitachi Semiconductor.
Silicon NPN Epitaxial
Application
UHF Local oscillator
Outline
CMPAK
1 2
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 15 3 50 100 150
- 55 to +150 Unit V V V m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage Note: Marking is “QI- ”. I EBO VCE(sat) h FE Cob f T VOSC Min 25
- -
- - 50
- 1.8
- Typ
- -
- -
- - 0.7 2.4 200 Max
- 0.3 10 1.0 0.3 180 1.0
- - p F GHz m V Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 m A, IB = 4 m A VCE = 5 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 m A VCC = 5 V, IC = 5 m A, f = 930 MHz
See characteristic curves of 2SC4196.
Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 120 100 80 60 40 20
50 100 150 Ambient Temperature Ta (°C)
Unit: mm
2.0 ± 0.2
0.1 0.3 +
- 0.05
0.1 0.16 +
- 0.06
1.25 ± 0.1
2.1 ± 0.3
- 0.1
0.9 ±...
