2SC4416 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application UHF Frequency conversion, Wide band amplifier Outline MPAK 3 1 2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain I EBO VCE(sat) h FE Cob f T CG Min 25 - - - - 50 - 3.0 15 Typ - - - - - - 0.85 3.8 19 Max - 0.1 10 0.3 0.3 180 1.3 - - p F GHz d B Unit V µA µA µA V Test conditions I C = 10 µA, IE = 0 VCB = 15 V, IE = 0 VCB = 13 V, RBE = ∞ VEB = 3 V, IC = 0 I C = 20 m A, IB = 4 m A VCE = 5 V, IC = 5 m A VCB = 10 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCC = 5 V, IC = 0.8 m A, f in = 900 MHz, f OSC = 930 MHz (- 5d Bm), f out = 30 MHz Noise figure Note: Marking is “XB- ”. - 8 1.2 d B Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 150 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 200 VCE = 5 V 160 0 0 50 100 150 Ambient Temperature Ta (°C) 1 2 5 10 20 Collector Current IC (m A) 50 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (p F) 5 Gain Bandwidth Product f T (GHz) VCE = 5 V 4 1.2 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 1.1 0 1 2 5 10 20 Collector Current IC (m A)...