2SC4422 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Outline UPAK 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 400 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “CR”. I EBO h FE Cob f T PG NF Min 15 - - - 50 - 4.5 7.0 - Typ - - - - - 1.2 6.0 9.0 1.6 Max - 1 1 1 250 1.6 - - 3.0 p F GHz d B d B Unit V µA µA µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 10 V, RBE = ∞ VEB = 1 V, IC = 0 VCE = 5 V, IC = 20 m A VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 m A VCE = 5 V, IC = 20 m A, f = 900 MHz VCE = 5 V, IC = 5 m A, f = 900 MHz Maximum Collector Dissipation Curve Collector Power Dissipation PC (m W) 600 Collector Current IC (m A) Typical Output Characteristic 20 IB = 25 µA 50 100 150 Ambient Temperature Ta (°C) 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio h FE VCE = 5 V 160 Gain Bandwidth Product f T (GHz)...